Semiconductors and Diodes

When the gate-to-source voltage (VGS) of a MOSFET with threshold voltage of 400 mV, working in saturation is 900 mV, the drain current in observed to be 1 mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied VGS of 1400 mV is

Choose proper substitutes for X and Y to make the following statement correct. Tunnel diode and Avalanche photodiode are operated in X bias and Y bias respectively.

Choose the correct match for input resistance of various amplifier configurations shown below ||| |---|---| | Configuration| Input resistance| | CB: Common Base| O: Low| | CC: Common Collector| MO: Moderate| | CE: Common Emitter| HI: High|

An n-type silicon bar 0.1 cm long and $\mu$m² in cross-sectional area has a majority carrier concentration of 5 $\times$ 10²⁰/m³ and the carrier mobility is 0.13 m²/V-s at 300K. If the charge of an electron is 1.6$\times$10^-19 coulomb, then the resistance of the bar is

The intrinsic carrier concentration of silicon sample of 300 K is 1.5 $\times$ 10¹⁶/m³. If after doping, the number of majority carriers is 5 $\times$ 10²⁰/m³, the minority carrier density is

In the amplifier circuit shown in figure, the values of R₁ and R₂ are such that the transistor is operating at V_CE = 3V and I_C = 1.5mA when its $\beta$is 150. For a transistor with $\beta$of 200, the operating point (V_CE, I_C) is

For an npn transistor connected as shown in figure, V_BE = 0.7 Volts. Given that reverse saturation current of the junction at room temperature 300°K is 10^-13 A, the emitter current is

Both transistors T₁ and T₂ in figure have a threshold voltage of 1 Volt. The device parameters K₁ and K₂ of T₁ and T₂ are, respectively, 36 A/V² and 9 A/V². The output voltage V₀ is

Given the ideal operational amplifier circuit shown in figure indicate the correct transfer characteristics assuming ideal diodes with zero cut-in voltage.