Multiple choice

Directions: Consider a silicon p - n junction at room temperature having the following parameters: Doping on the n-side = 1 x 1017 cm-3 Depletion width on the n-side = 0.1 $\mu$m

The built-in potential of the junction Depletion width on the p −side = 1.0 $\mu$m Intrinsic carrier concentration = 1.4 x 1010 cm-3 Thermal voltage = 26 mV Permittivity of free space = 8.85 x 10-14 F cm-1 Dielectric constant of silicon = 12 The built-in potential of the junction

  1. is 0.70 V

  2. is 0.76 V

  3. is 0.82 V

  4. Cannot be estimated from the data given
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B Correct answer
Explanation

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