The doping concentrations on the p-side and n-side of a silicon diode are 1 ^_x 10¹⁶ cm^-3 and 1 ^_x 10¹⁷ cm^-3, respectively. A forward bias of 0.3 V is applied to the diode. At T = 300 K, the intrinsic carrier concentration of silicon n_i = 1.5 ^_x 10¹⁰ cm^-3 and ^{$\frac{kT}{q}$} = 26 m V. The electron concentration at the edge of the depletion region on the p-side is