Multiple choice

When a silicon diode having a doping concentration of NA = 9 x 10 cm16 on p-side and ND = 1 x 1016 cm-3 on n-side is reverse biased, the total depletion width is found to be 3 $\mu$m. Given that the permittivity of silicon is 1.04 x 10-12 F/cm, the depletion width on the p-side and the maximum electric field in the depletion region, respectively, are

  1. 2.7 $\mu$m and 2.3 x 105 V/cm
  2. 0.3 $\mu$m and 4.15 x 105 V/cm
  3. 0.3 $\mu$m and 0.42 x 105 V/cm
  4. 2.1 $\mu$m and 0.42 x 105 V/cm
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B Correct answer
Explanation

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