Multiple choice

Directions : Consider a silicon p - n junction at room temperature having the following parameters: Doping on the n-side = 1 x 1017 cm-3 Depletion width on the n-side = 0.1 $\mu$m Depletion width on the p −side = 1.0 $\mu$m Intrinsic carrier concentration = 1.4 x 1010 cm-3 Thermal voltage = 26 mV Permittivity of free space = 8.85 x 10-14 F cm-1 Dielectric constant of silicon = 12

The peak electric field in the device is

  1. 0.15 MV. cm-1, directed from p −region to n −region

  2. 0.15 MV. cm-1, directed from n −region to p −region

  3. 1 80 MV. cm-1, directed from p-region to n −region

  4. 1.80 MV. cm-1, directed from n −region to p −region
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B Correct answer
Explanation

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