An n-type silicon bar 0.1 cm long and $\mu$m2 in cross-sectional area has a majority carrier concentration of 5 $\times$ 1020/m3 and the carrier mobility is 0.13 m2/V-s at 300K. If the charge of an electron is 1.6$\times$10-19 coulomb, then the resistance of the bar is
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