Tag: electronic devices
Questions Related to electronic devices
Choose the wrong statement
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p-type semi conductor is positively charged
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n-type semi conductor is negatively charged
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both p-type and n-type are electrically neutral
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none of these
p and n type materials are NOT positively and negatively charged. An n-type material by itself has mainly negative charge carriers (electrons) which are able to move freely, but it is still neutral because the fixed donor atoms, having donated electrons, are positive
In N -- type semi - conductor current is due to
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Electrons
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Holes
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Electrons and holes
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none of these
In N-type semi-conductor majority carriers are electrons. So, when the voltage is applied across the semi-conductor electrons started to drift from negative to positive terminal as result current starts to flow in opposite direction of electrons.
Fermi level of energy of an intrinsic semiconductor lies
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in the middle of the forbidden gap.
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below the middle of forbidden gap.
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above the middle of forbidden gap.
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outside the forbidden gap.
Fermi energy is determined as the energy point where the probability of occupancy by an electron is exactly $50\ %$ or $0.5$, i.e., $\dfrac{1}{2}$. For the intrinsic semiconductor, since electrons and holes are always created in pairs, $n = p = ni$. Hence, there are equal number of holes and electrons in valence band and conduction band respectively. Therefore, the Fermi energy level lies in the middle of the forbidden gap, i.e., energy band gap.
In a p-type semiconductor, the acceptor valence band is
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close to the valence band of the host crystal
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close to conduction band of the host crystal
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below the conduction band of the host crystal
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above the conduction band of the host crystal
The acceptor valence band is close to the valence band of host crystal
In an n-type semiconductor, donor valence band is
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above the conduction band of the host crystal
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close to the valence band of the host crystal
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close to the conduction band of the host crystal
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below the valence band of the host crystal
The donor valence band lies little below the conduction band of the host crystal.
An intrinsic semiconductor at the absolute zero temperature ________.
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behaves like a metallic conductor
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behaves like an insulator
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has a large number of holes
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has a large number of electrons
An intrinsic semiconductor at 0 K, has electrons only in the valence band. Forbidden gap - 3 eV, as a result, electrons do not have sufficient energy to excite to the conduction band. Since there are no electrons in the conduction band, so it behaves as an insulator at 0 K.
A doped intrinsic semiconductor is called a/an ________ semiconductor.
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intrinsic
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extrinsic
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doped semiconductor
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active semiconductor
A pure semiconductor or semiconductor with no impurities is called intrinsic semiconductor. When a pure semiconductor is doped with an impurity, the process is called doping, due to increased conductivity of an extrinsic semiconductor. Such a semiconductor is called extrinsic semiconductor.
The temperature dependence of resistances of $Cu$ and undoped $Si$ in the temperature range $300-400K$, is best described by:
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Linear increase for $Cu$, exponential increase for $Si$.
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Linear increase for $Cu$, exponential decrease for $Si$.
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Linear increase for $Cu$, linear decrease for $Si$
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Linear increase for $Cu$, linear increase for $Si$
As we know Cu is a conductor,so increase in temperature will lead to increase in resistance.
$\rho ={ \rho } _{ 0 }{ e }^{ -aT }$ where $a$ is a constant
Give two example of intrinsic semiconductor?
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aluminum
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Silicon, germanium
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copper
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nitrogen
Doping of intrinsic semiconductor is done
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To neutralize charge carriers
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To increase the concentration of majority charge carriers
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To make it neutral before disposal
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To carry out further purification
Doping is the process of adding impurities to intrinsic semiconductors to alter their properties. Doping of intrinsic semiconductor is done to increase the concentration of majority charge carrier so that it can be use as p-type or n-type semiconductor in diode.