The source of a silicon (n_i = 10¹⁰ per cm³) n – channel MOS transistor has an area of 1 sq ^{_{$\mu m$}} and a depth of 1 ^{_{$\mu m$}}. If the dopant density in the source is 10¹⁹/cm³, the number of holes in the source region with the above volume is approximately.

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