Multiple choice

The figure shows the high-frequency capacitance-voltage (C-V) characteristics of a Metal/SiO2 /silicon (MOS) capacitor having an area of 1 $\times$10-4 cm2. Assume that the permittivities ($\epsilon_0 \epsilon_r$) of silicon and SiO2 are 1 $\times$ 10-12 F / cm and 3.5 $\times$10-13 F / cm respectively.

Consider the following statements about the C-V characteristics plot: S1: The MOS capacitor has an n-type substrate. S2: If positive charges are introduced in the oxide, the C-V plot will shift to the left. Which of the following is true?

  1. Both S1 and S2 are true.

  2. S1 is true and S2 is false.

  3. S1 is false and S2 is true.

  4. Both S1 and S2 are false.
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C Correct answer
Explanation

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