Multiple choice

Consider the following statements Sq and S2. S1 : The threshold voltage (VT) of MOS capacitor decreases with increase in gate oxide thickness. S2 : The threshold voltage (VT) of a MOS capacitor decreases with increase in substrate doping concentration. Which one of the following is correct?

  1. S1 is FALSE and S2 is TRUE.

  2. Both S1 and S2 are TRUE.

  3. Both S1 and S2 are FALSE.

  4. S1 is TRUE and S2 is FALSE.
Reveal answer Fill a bubble to check yourself
C Correct answer
Explanation

Increase in gate oxide thickness makes difficult to induce charges in channel. Thus $V_T$ increases if we increases gate oxide thickness. Hence $S_1$ is false. Increase in substrate doping concentration require more gate voltage because initially induce charges will get combine in substrate. Thus $V_T$ increases if we increase substrate doping concentration. Hence $S_2$ is false.

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