Multiple choice

The figure shows the high-frequency capacitance-voltage (C-V) characteristics of a Metal/SiO2 /silicon (MOS) capacitor having an area of 1 $\times$10-4 cm2. Assume that the permittivities ($\epsilon_0 \epsilon_r$) of silicon and SiO2 are 1 $\times$ 10-12 F / cm and 3.5 $\times$10-13 F / cm respectively.

The gate oxide thickness in the MOS capacitor is

  1. 50 nm

  2. 143 nm

  3. 350 nm
  4. 1 $\mu$m
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