Physics
Semiconductors and Diodes
461 Questions
Semiconductors and diodes form the foundation of modern electronics, covering topics like intrinsic carrier concentration and Zener breakdown. Questions often explore the characteristics of bipolar junction transistors (BJT) and the properties of doped silicon materials. This topic is crucial for physics and electronics engineering competitive exams.
Zener diode breakdownBJT circuit analysisIntrinsic carrier concentrationDoping in semiconductorsEmitter follower circuit
Semiconductors and Diodes Questions
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0 K
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0oC
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High temperature
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All temperatures
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None of these
D
Correct answer
Explanation
Densities are independent of temperature and is dominated by the energy gap and densities of states.
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0.005 μm
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0.5 μm
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5 mm
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10-10 m
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None of these
B
Correct answer
Explanation
Correct theoretical value
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Has to dissipate the maximum power
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Has to supply the charge carriers
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Is the first region of the transistor
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Must possess low resistance
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None of these
B
Correct answer
Explanation
The main purpose is to supply the charge carriers.
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The top of the valence band
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The top of the conduction band
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The bottom of the valence band
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The bottom of the conduction band
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None of these
A
Correct answer
Explanation
As we increase the concentration, fermi level goes downwards from the middle, which will be the top of the valence band. At high temperature, p-type and n-type act as intrinsic semiconductors.
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A large increase in the emitter current
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A large increase in the collector current
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A large decrease in the collector current
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A very small change in collector reverse saturation current
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None of these
D
Correct answer
Explanation
the reverse saturtaion current is not affected by it.
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Common base
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Common emitter
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Common collector
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Common source JFET
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None of these
D
Correct answer
Explanation
The transistor configuration having high input resistance is temperature stable and temperature independent.
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It raises the power level.
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It exhibits high input impedance and low output impedance.
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It has high current gain.
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It has high voltage gain.
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None of these
D
Correct answer
Explanation
Common collector emitter-follower configuration has the lowest voltage gain.
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The emitter junction bias is just equal to the collector junction bias
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No currents are flowing
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No signal is applied to the input
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It is unbiased
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None of these
C
Correct answer
Explanation
Q-point can be found out while there is no input signal.
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Avalanche breakdown
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Thermal runway
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Base narrowing
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Zener breakdown
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None of these
C
Correct answer
Explanation
The early effect is the variation in the width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage.
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Have negative charge
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Are lighter
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Experience collisions less frequently
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Need less energy to move them
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None of these
B
Correct answer
Explanation
The mobility is inversely proportional to the effective mass and the effective mass of a hole is much higher than that of an electron. Thus, the mobility of an electron is higher than that of a hole.
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complementary metal oxide semiconductor
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costly metal oxide semiconductor
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complementary metal oxygen semiconductor
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none of these
A
Correct answer
Explanation
CMOS stands for Complementary Metal Oxide Semiconductor, a technology used for constructing integrated circuits.
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bipolar
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tripolar
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unipolar
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none of these
C
Correct answer
Explanation
MOS transistors (like MOSFETs) are unipolar devices, meaning their operation depends on only one type of charge carrier (either electrons or holes).
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p channel mos
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p complement mos
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carrier mos
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none of these
A
Correct answer
Explanation
PMOS stands for P-channel Metal Oxide Semiconductor, which uses p-type charge carriers for conduction.
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holes
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free electrons
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minority electrons
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majority electrons