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Test 4 - Electronic Devices | Electronics and Communication (ECE)

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Multiple Choice

If P is Passivation, Q is n-well implant, R is metallization and S is soruce/drain diffusion, then the order in which they are carried out in a standard n-well CMOS fabrication process, is

  1. P-Q-R-S
  2. Q-S-R-P
  3. R-P-S-Q
  4. S-R-Q-P
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