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Test 1 - Electronic Devices | Electronics and Communication (ECE)
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A silicon PN junction is forward biased with a constant current at room temperature. When the temperature is increased by 10oC, the forward bias voltage across the PN junction
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A
decreases by 25mV
💡 Explanation:
For every $1^\circ C$ increase in temperature, forward bias voltage across diode decreases by $2.5 mV$. Thus for $10^\circ C$ increase, there us $25mV$ decreases.