GATE Technical Test for ECE

A contains F0 (in hexadecimal), F0 can be written as 1111 0000 STC(set Carry Flag) CF=1
RRC(Rotate Right ACCUMULATOR with Carry)
Now Rotate the accumulator content to the right with carry thrice
Initial data 1 1111 0000
First Rotation 0 1111 1000
second Rotation 0 0111 1100
Third Rotation 0 0011 1110
In Hexadecimal 0011 1110 is written as 3E

VT is a function of several components, most of which are material constants such as the difference in work-function between gate and substrate material, the oxide thickness, the Fermi voltage, the charge of impurities trapped at the surface between channel and gate oxide, and the dosage of ions implanted for threshold adjustment. From the above arguments, it has become clear that the source-bulk voltage VSB has an impact on the threshold as well.
Therefore, whenever there is an increase in the source-bulk voltage, threshold voltage also increases. 

2^12=4096. So 12 address lines are reqiured to access 4KB