Multiple choice

Which of the following processes is preferred to form the gate dielectric (SiO2) of MOSFETs?

  1. Sputtering

  2. Molecular beam epitaxy

  3. Wet oxidation

  4. Dry oxidation

Reveal answer Fill a bubble to check yourself
D Correct answer
Explanation

Dry oxidation is better than wet oxidation. So, dry oxidation is always preferred.