Multiple choice

The channel resistance of an N-channel JFET shown in the figure below is 600$\Omega$ when the full channel thickness (tch) of 10$\mu$m is available for conduction. The built-in voltage of the gate P+ N junction (Vbi) is - 1 V. When the gate to source voltage (VGS) is 0 V, the channel is depleted by 1$\mu$m on each side due to the built in voltage and hence the thickness available for conduction is only 8$\mu$m

The channel resistance when VGS = - 3 V is

  1. 360$\Omega$
  2. 917$\Omega$
  3. 1000$\Omega$
  4. 3000$\Omega$
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C Correct answer
Explanation

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