Multiple choice

A silicon wafer has 100 nm of oxide on it and is furnace at a temperature above 10000 C for further oxidation in dry oxygen. The oxidation rate

  1. is independent of current oxide thickness and temperature

  2. is independent of current oxide thickness but depends on temperature

  3. slows down as the oxide grows

  4. is zero as the existing oxide prevents further oxidation

Reveal answer Fill a bubble to check yourself
D Correct answer
Explanation

Oxidation rate is zero because the existing oxide prevents the further oxidation.