Multiple choice

A heavily doped n − type semiconductor has the following data: Hole-electron mobility ratio: 0.4 Doping concentration: 84.2 ×10 atoms/m3 Intrinsic concentration: 41.5 ×10 atoms/m3 The ratio of conductance of the n − type semiconductor to that of the intrinsic semiconductor of same material and at the same temperature is given by

  1. 0.00005

  2. 2,000

  3. 10,000

  4. 20,000
Reveal answer Fill a bubble to check yourself
D Correct answer
Explanation

Keep practicing — related questions